FQU30N06
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
Features
- 22.7A, 60V, RDS(on) = 0.045Ω @ VGS = 10V
- Low gate charge ( typical 19 n C)
- Low Crss ( typical 40 p F)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 150o C maximum junction temperature rating
- Ro HS pliant
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D-PAK
FQD Series
I-PAK
FQU Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain...
