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FQU30N06 - 60V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 22.7A, 60V, RDS(on) = 0.045Ω @ VGS = 10V.
  • Low gate charge ( typical 19 nC).
  • Low Crss ( typical 40 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • 150oC maximum junction temperature rating.
  • RoHS Compliant DD ! GS D-PAK FQD Series GDS I-PAK FQU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage.

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Datasheet Details

Part number FQU30N06
Manufacturer Fairchild Semiconductor
File Size 702.95 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet FQU30N06 Datasheet
Additional preview pages of the FQU30N06 datasheet.

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Full PDF Text Transcription

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FQD30N06 / FQU30N06 FQD30N06 / FQU30N06 60V N-Channel MOSFET January 2009 QFET® General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. Features • 22.7A, 60V, RDS(on) = 0.
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