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FQU30N06L - 60V LOGIC N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 24A, 60V, RDS(on) = 0.039Ω @ VGS = 10V Low gate charge ( typical 15 nC) Low Crss ( typical 50 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating Low level gate drive requirements allowing direct operation form logic drivers D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv.

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Datasheet Details

Part number FQU30N06L
Manufacturer Fairchild Semiconductor
File Size 649.71 KB
Description 60V LOGIC N-Channel MOSFET
Datasheet download datasheet FQU30N06L Datasheet
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FQD30N06L / FQU30N06L May 2001 QFET FQD30N06L / FQU30N06L 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. TM Features • • • • • • • • 24A, 60V, RDS(on) = 0.
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