FQU30N06L
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
Features
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- - 24A, 60V, RDS(on) = 0.039Ω @ VGS = 10V Low gate charge ( typical 15 n C) Low Crss ( typical 50 p F) Fast switching 100% avalanche tested Improved dv/dt capability 150o C maximum junction temperature rating Low level gate drive requirements allowing direct operation form logic drivers
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D-PAK
FQD Series
I-PAK
FQU Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt...
