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FQU5N50C - 500V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 4.0A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V.
  • Low gate charge ( typical 18nC).
  • Low Crss ( typical 15pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS Compliant D D ! D-PAK G S FQD Series GDS I-PAK FQU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuo.

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Datasheet Details

Part number FQU5N50C
Manufacturer Fairchild Semiconductor
File Size 660.61 KB
Description 500V N-Channel MOSFET
Datasheet download datasheet FQU5N50C Datasheet
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Full PDF Text Transcription

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FQD5N50C / FQU5N50C FQD5N50C / FQU5N50C 500V N-Channel MOSFET October 2008 QFET® General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features • 4.0A, 500V, RDS(on) = 1.
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