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FQU5N50CTU-WS - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 4.0 A, 500 V, RDS(on) = 1.4 Ω @VGS = 10 V.
  • Low Gate Charge (Typ. 18 nC).
  • Low Crss (Typ. 15 pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.

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Datasheet preview – FQU5N50CTU-WS

Datasheet Details

Part number FQU5N50CTU-WS
Manufacturer ON Semiconductor
File Size 931.09 KB
Description N-Channel MOSFET
Datasheet download datasheet FQU5N50CTU-WS Datasheet
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Full PDF Text Transcription

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FQU5N50CTU-WS — N-Channel QFET® MOSFET FQU5N50CTU-WS N-Channel QFET® MOSFET 500 V, 4.0 A, 1.4 Ω Features • 4.0 A, 500 V, RDS(on) = 1.4 Ω @VGS = 10 V • Low Gate Charge (Typ. 18 nC) • Low Crss (Typ. 15 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D I-PAK G GDS Absolute Maximum Ratings TC = 25°C unless otherwise noted.
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