G60N100BNTD - NPT IGBT

Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Features

High Speed Switching.
Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A.
High Input Impedance.
Built-in Fast Recovery Diode.

Fairchild Semiconductor

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Datasheet Details

Part number	G60N100BNTD
Manufacturer	Fairchild Semiconductor
File Size	417.80 KB
Description	NPT IGBT
Datasheet	G60N100BNTD Datasheet
Additional preview pages of the G60N100BNTD datasheet.

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G60N100 - NPT IGBT

Full PDF Text Transcription

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FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A • High Input Impedance • Built-in Fast Recovery Diode Applications • UPS, Welder March 2014 General Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.

Published: Dec 19, 2020 |