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G60N100BNTD Datasheet

Manufacturer: Fairchild (now onsemi)
G60N100BNTD datasheet preview

Datasheet Details

Part number G60N100BNTD
Datasheet G60N100BNTD-FairchildSemiconductor.pdf
File Size 417.80 KB
Manufacturer Fairchild (now onsemi)
Description NPT IGBT
G60N100BNTD page 2 G60N100BNTD page 3

G60N100BNTD Overview

Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications. GCE TO-264 3L Ratings Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL Description Collector to Emitter Voltage...

G60N100BNTD Key Features

  • High Speed Switching
  • Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A
  • High Input Impedance
  • Built-in Fast Recovery Diode

G60N100CE from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Taiwan Semiconductor Logo G60N100CE TSG60N100CE Taiwan Semiconductor
Fairchild (now onsemi) logo - Manufacturer

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Part Number Description
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