Download G60N100 Datasheet PDF
Fairchild Semiconductor
G60N100
Features - High Speed Switching - Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A - High Input Impedance - Built-in Fast Recovery Diode Applications - UPS, Welder March 2014 General Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications. TO-264 3L Absolute Maximum Ratings Symbol VCES VGES ICM (1) IF TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25o C @ TC = 100o C @ TC = 25o C @ TC = 100o C @ TC = 25o C @ TC = 100o C Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8”...