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G60N100 - NPT IGBT

Download the G60N100 datasheet PDF. This datasheet also covers the G60N100BNTD variant, as both devices belong to the same npt igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Key Features

  • High Speed Switching.
  • Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A.
  • High Input Impedance.
  • Built-in Fast Recovery Diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G60N100BNTD-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
G60N100BNTD NPT IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A • High Input Impedance • Built-in Fast Recovery Diode Applications • UPS, Welder March 2014 General Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.