G60N10 Description
The G60N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G60N10 is N-Channel Enhancement Mode Power MOSFET manufactured by GOFORD.
| Manufacturer | Part Number | Description |
|---|---|---|
| G60N100 | NPT IGBT | |
| G60N100BNTD | NPT IGBT | |
| G60N100CE | TSG60N100CE |
The G60N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.