| Part number | G60N10T |
|---|---|
| Datasheet | G60N10T-GOFORD.pdf |
| File Size | 1.02 MB |
| Manufacturer | GOFORD |
| Description | N-Channel Enhancement Mode Power MOSFET |
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The G60N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
G60N100 | NPT IGBT | Fairchild Semiconductor |
|
G60N100BNTD | NPT IGBT | Fairchild Semiconductor |
 |
G60N100CE | TSG60N100CE | Taiwan Semiconductor |
| Part Number | Description |
|---|---|
| G60N10 | N-Channel Enhancement Mode Power MOSFET |
| G60N04 | MOSFET |
| G60N04 | N-Channel Enhancement Mode Power MOSFET |
| G60N04D52 | Dual N-Channel Enhancement Mode Power MOSFET |
| G60N04K | N-Channel Enhancement Mode Power MOSFET |
| G60N06 | N-Channel Enhancement Mode Power MOSFET |
| G60N06T | N-Channel Enhancement Mode Power MOSFET |
