G60N10T
Description
The G60N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V)
100V 60A < 17mΩ < 19mΩ l 100% Avalanche Tested l Ro HS pliant
Schematic diagram
Application l Power switch l DC/DC converters
TO-220
Ordering Information
Device G60N10T
Package TO-220
Marking G60N10
Packaging 50pcs/Tube
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Single pulse avalanche energy Operating Junction and Storage Temperature Range
(note1) （note2）
VDS ID IDM VGS PD EAS TJ, Tstg
Thermal Resistance
Parameter
Symbol
Thermal Resistance, Junction-to-Ambient Maximum Junction-to-Case
Rth JA Rth JC
.gofordsemi.
TEL：0755-29961263
Value
Unit
±20...
