Description
The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package.
Features
- Compact 4-pin package.
- Current transfer ratio in selected groups: H11AA814: 20-300% H11A817: H11AA814A: 50-150% H11A817A: H11A617A: 40%-80% H11A817B: H11A617B: 63%-125% H11A817C: H11A617C: 100%-200% H11A817D: H11A617D: 160%-320%.
- Minimum BVCEO of 70V guaranteed 50-600% 80-160% 130-260% 200-400% 300-600%.
H11A617A Datasheet
