H11A617D
DESCRIPTION
The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
H11A617 & H11A817 SCHEMATIC
ANODE 1
4 COLLECTOR
FEATURES
- pact 4-pin package
- Current transfer ratio in selected groups: H11AA814: 20-300% H11A817: H11AA814A: 50-150% H11A817A: H11A617A: 40%-80% H11A817B: H11A617B: 63%-125% H11A817C: H11A617C: 100%-200% H11A817D: H11A617D: 160%-320%
- Minimum BVCEO of 70V guaranteed 50-600% 80-160% 130-260% 200-400% 300-600%
CATHODE 2
3 EMITTER
APPLICATIONS
H11AA814 Series
- AC line monitor
- Unknown polarity DC sensor
- Telephone line interface H11A617 and H11A817 Series
- Power supply regulators
- Digital logic inputs
- Microprocessor inputs
© 2003 Fairchild Semiconductor Corporation
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