H11AA1-M Description
The H11AAX-M series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output. Units % Current Transfer Ratio, Symmetry VCE(SAT) Saturation Voltage, Collector to Emitter IF = ±10mA, VCE = 10V (Figure 11) IF = ±10mA, ICE = 0.5mA All All 3.0 .40 V Isolation Characteristics Symbol CI-O VISO RISO Characteristic Package Capacitance Input/Output...
H11AA1-M Key Features
- Bi-polar emitter input
- Built-in reverse polarity input protection
- Underwriters Laboratory (UL) recognized File
- VDE approved File #102497 (ordering option ‘V’)