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H11D4 - HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

General Description

The H11DX and 4N38 are phototransistor-type optically coupled optoisolators.

An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor.

Key Features

  • High Voltage - H11D1, H11D2, BVCER = 300 V - H11D3, H11D4, BVCER = 200 V.
  • High isolation voltage - 5300 VAC RMS - 1 minute - 7500 VAC PEAK - 1 minute.
  • Underwriters Laboratory (UL) recognized File# E90700 ANODE 1 6 BASE.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
H11D1 HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS
H11D2 HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS
H11D3 HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS
H11A1 GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
H11A2 GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.