HFA50HF20 Datasheet | Fairchild Semiconductor

Features - - - - - TM VR = 200V V F = 0.96V Qrr - = 640n C di(rec)M/dt - = 980A/µs - 125°C Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount ANODE ANODE Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. SMD -1 Absolute Maximum Ratings (per Leg) Parameter VR I F @ TC = 100°C I FSM @ TC = 25°C PD @ TC = 25°C TJ TSTG D.C. Reverse Voltage Continuous Forward Current  Single Pulse Forward Current ‚ Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. 200 50 600 125 -55 to +150 Units V A W °C Thermal - Mechanical Characteristics Parameter RθJC Wt Junction-to-Case, Single Leg Conducting Weight Typ. - 2.6 Max. - Units °C/W g Note:  D.C. = 50% rect. wave ‚ 1/2 sine wave, 60 Hz , P.W. = 8.33 ms 4/7/97 Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified) Parameter VBR VFM Cathode Anode Breakdown Voltage Max Forward Voltage Min. Typ. Max. Units - - - 0.88 0.96 0.98 1.11 0.75...