HGT1S12N60B3DS Datasheet | Fairchild Semiconductor

HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices bine the best Features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o C and 150o C. The IGBT used is the development type TA49171. The diode used in anti-parallel with the IGBT is the development type TA49188. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49173. Features - 27A, 600V, TC = 25o C - 600V Switching SOA Capability - Typical Fall Time- - - . 112ns at TJ = 150o C - Short Circuit Rating - Low Conduction Loss - Hyperfast Anti-Parallel Diode - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards Packaging JEDEC TO-220AB (ALTERNATE VERSION) COLLECTOR (FLANGE) E Ordering Information PART NUMBER HGTP12N60B3D HGTG12N60B3D HGT1S12N60B3DS PACKAGE TO-220AB TO-247 TO-263AB BRAND 12N60B3D 12N60B3D 12N60B3D JEDEC TO-263AB NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g. HGT1S12N60B3DS9A. COLLECTOR (FLANGE) E Symbol JEDEC STYLE TO-247 E COLLECTOR (BOTTOM SIDE METAL) Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762...