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HGT1S12N60B3S Datasheet N-channel IGBT

Manufacturer: Intersil (now Renesas)

Overview: HGTP12N60B3, HGT1S12N60B3S Data Sheet January 2000 File Number 4410.

HGT1S12N60B3S datasheet preview

Datasheet Details

Part number	HGT1S12N60B3S
Manufacturer	Intersil (now Renesas)
File Size	112.92 KB
Description	N-Channel IGBT
Datasheet	HGT1S12N60B3S_IntersilCorporation.pdf

Key Features

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching.

HGT1S12N60B3S Distributor

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