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HGTD3N60C3 - 6A/ 600V/ UFS Series N-Channel IGBTs

General Description

The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best

Key Features

  • of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching.

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📁 Similar Datasheet

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
HGTD3N60C3S 6A/ 600V/ UFS Series N-Channel IGBTs
HGTD3N60A4 600V/ SMPS Series N-Channel IGBT
HGTD3N60A4S 600V/ SMPS Series N-Channel IGBT
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Full PDF Text Transcription (Reference)

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S E M I C O N D U C T O R HGTD3N60C3, HGTD3N60C3S 6A, 600V, UFS Series N-Channel IGBTs Description The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49113.