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HGTD3N60C3S Datasheet 6a/ 600v/ Ufs Series N-channel IGBTs

Manufacturer: Intersil (now Renesas)

Overview: HGTD3N60C3S, HGTP3N60C3 Data Sheet January 2000 File Number 4139.

Key Features

  • of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching.

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