HGTD3N60B3S
features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o C and 150o C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49192.
Features
- 7A, 600V, TC = 25o C
- 600V Switching SOA Capability
- Typical Fall Time-
- - . 115ns at TJ = 150o C
- Short Circuit Rating
- Low Conduction Loss
Packaging
JEDEC TO-220AB
E COLLECTOR (FLANGE) C G
Ordering Information
PART NUMBER HGTD3N60B3S HGT1S3N60B3S HGTP3N60B3 PACKAGE TO-252AA TO-263AB TO-220AB BRAND G3N60B G3N60B3 G3N60B3
COLLECTOR (FLANGE) G E
JEDEC TO-263AB
NOTE: When ordering, use the entire part number. Add the suffix 9A to...
