| Part Number | HGTD3N60C3S Datasheet |
|---|---|
| Manufacturer | Intersil |
| Overview | HGTD3N60C3S, HGTP3N60C3 Data Sheet January 2000 File Number 4139.5 6A, 600V, UFS Series N-Channel IGBTs The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the b. of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications. |
HGTD3N60C3S Datasheet PDF
The HGTD3N60C3S is a 6A/ 600V/ UFS Series N-Channel IGBTs.
| Part Number | HGTD3N60C3S Datasheet |
|---|---|
| Description | 6A/ 600V/ UFS Series N-Channel IGBTs |
| Manufacturer | Fairchild Semiconductor |
| Overview | The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and . of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications. |