HGTD3N60C3S
Overview
The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
- 6A, 600V at TC = 25oC
- 600V Switching SOA Capability
- Short Circuit Rating
- Low Conduction Loss
