HGTP2N120CN
HGTP2N120CN is N-Channel IGBT manufactured by Fairchild Semiconductor.
HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS
Data Sheet December 2001
13A, 1200V, NPT Series N-Channel IGBT
The HGTD2N120CNS, HGTP2N120CN, and HGT1S2N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs bine the best Features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49313.
Features
- 13A, 1200V, TC = 25o C
- 1200V Switching SOA Capability
- Typical Fall Time
- -
- . 360ns at TJ = 150o C
- Short Circuit Rating
- Low Conduction Loss
- Avalanche Rated
- Temperature pensating SABER™ Model Thermal Impedance SPICE Model .fairchildsemi.
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”
Ordering Information
PART NUMBER HGTP2N120CN HGTD2N120CNS HGT1S2N120CNS PACKAGE TO-220AB TO-252AA TO-263AB BRAND 2N120CN 2N120C 2N120CN
Packaging
JEDEC TO-220AB
E COLLECTOR (FLANGE) C
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB and TO-252AA variant in Tape and Reel, e.g., HGT1S2N120CNS9A.
Symbol
JEDEC TO-252AA
COLLECTOR (FLANGE)
JEDEC TO-263AB
COLLECTOR (FLANGE) G E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027...
