Datasheet4U Logo Datasheet4U.com

HGTP2N120BND Datasheet N-channel IGBT

Manufacturer: Intersil (now Renesas)

Overview: HGTP2N120BND, HGT1S2N120BNDS Data Sheet January 2000 File Number 4698.2 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family.

Key Features

  • of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49312. The Diode used is the development type TA49056. The IGBT is ideal for many high voltage switching.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo HGTP2N120CN N-Channel IGBT Fairchild Semiconductor

More Datasheets from Intersil (now Renesas)

Part Number Description
HGTP2N120BN N-Channel IGBT
HGTP2N120CN N-Channel IGBT
HGTP2N120CND N-Channel IGBT
HGTP20N35G3VL N-Channel IGBT
HGTP20N60A4 N-Channel IGBT
HGTP20N60B3 N-Channel IGBT
HGTP20N60C3 N-Channel IGBT
HGTP10N120BN N-Channel IGBT
HGTP10N40C1 N-Channel IGBT
HGTP10N40C1D N-Channel IGBT

HGTP2N120BND Distributor