Datasheet4U Logo Datasheet4U.com

HUF75617D3 - N-Channel MOSFET

Key Features

  • Ultra Low On-Resistance - rDS(ON) = 0.090Ω, VGS = 10V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve SOURCE DRAIN GATE GATE DRAIN (FLANGE) SOURCE DRAIN (FLANGE) HUF75617D3 HUF75617D3S Symbol D Ordering Information PART NUMBER HUF75617D3.

📥 Download Datasheet

Full PDF Text Transcription for HUF75617D3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HUF75617D3. For precise diagrams, and layout, please refer to the original PDF.

HUF75617D3, HUF75617D3S Data Sheet December 2001 16A, 100V, 0.090 Ohm, N-Channel, UltraFET® Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features • Ultra Low On-...

View more extracted text
SFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features • Ultra Low On-Resistance - rDS(ON) = 0.090Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve SOURCE DRAIN GATE GATE DRAIN (FLANGE) SOURCE DRAIN (FLANGE) HUF75617D3 HUF75617D3S Symbol D Ordering Information PART NUMBER HUF75617D3 PACKAGE TO-251AA TO-252AA BRAND 75617D 75617D G HUF75617D3S S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF7