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HUF75623P3 - N-Channel MOSFET

Key Features

  • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve GATE SOURCE DRAIN (FLANGE) HUF75623P3 HUF75623S3ST Symbol D Ordering Information PART NUMBER.

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Full PDF Text Transcription for HUF75623P3 (Reference)

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HUF75623P3, HUF75623S3ST Data Sheet December 2001 22A, 100V, 0.064 Ohm, N-Channel, UltraFET® Power MOSFETs Packaging JEDEC TO-220AB SOURCE DRAIN GATE JEDEC TO-263AB DRAIN...

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OSFETs Packaging JEDEC TO-220AB SOURCE DRAIN GATE JEDEC TO-263AB DRAIN (FLANGE) Features • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve GATE SOURCE DRAIN (FLANGE) HUF75623P3 HUF75623S3ST Symbol D Ordering Information PART NUMBER PACKAGE TO-220AB TO-263AB BRAND 75623P 75623S HUF75623P3 HUF75623S3ST G S NOTE: When ordering, use the entire part number i.e.