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HUF75623P3 - N-Channel MOSFET

Key Features

  • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www. intersil. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve DRAIN (FLANGE) HUF75623P3 Symbol D Ordering Information PART NUMBER HUF75623P3 G.

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Full PDF Text Transcription for HUF75623P3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HUF75623P3. For precise diagrams, tables, and layout, please refer to the original PDF.

HUF75623P3 Data Sheet November 1999 File Number 4804 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Features • Ultra Lo...

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MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.intersil.com • Peak Current vs Pulse Width Curve • UIS Rating Curve DRAIN (FLANGE) HUF75623P3 Symbol D Ordering Information PART NUMBER HUF75623P3 G PACKAGE TO-220AB BRAND 75623P NOTE: When ordering, use the entire part number i.e., HUF75623P3 S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF75623P3 UNITS V V V A A 100 100 ±20 22 15 Figure 4 Figures 6, 14, 15