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HUF76113T3ST Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: HUF76113T3ST Data Sheet June 2003 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is ® manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products. Formerly developmental type TA76113.

Key Features

  • Logic Level Gate Drive.
  • 4.7A, 30V.
  • Ultra Low On-Resistance, rDS(ON) = 0.031Ω.
  • Temperature Compensating PSPICE® Model.
  • Temperature Compensating SABER™ Model.
  • Thermal Impedance SPICE Model.
  • Thermal Impedance SABER Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER HUF76113T3.

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Similar Datasheet

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