HUF76113T3ST Description
HUF76113T3ST TM Data Sheet June 2000 File Number 4388.3 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is ® manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and...
HUF76113T3ST Key Features
- Logic Level Gate Drive
- 4.7A, 30V
- Ultra Low On-Resistance, rDS(ON) = 0.031Ω
- Temperature pensating PSPICE® Model
- Temperature pensating SABER™ Model
- Thermal Impedance SPICE Model
- Thermal Impedance SABER Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature