HUFA75329G3 Overview
HUFA75329G3, HUFA75329P3, HUFA75329S3S Data Sheet June 2002 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode...
HUFA75329G3 Key Features
- 49A, 55V
- Ultra Low On-Resistance, rDS(ON) = 0.024Ω
- Temperature pensating PSPICE® and SABER™ Models
- Available on the web at: .fairchildsemi
- Thermal Impedance PSPICE and SABER Models
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334, “Guidelines for Soldering Surface Mount ponents to PC Boards”