Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www. fairchildsemi. com.
Peak Current vs Pulse Width Curve.
UIS Rating Curve.
Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER HUFA75332G3 HUFA75332P3 HUFA75332S3S.
Full PDF Text Transcription for HUFA75329P3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HUFA75329P3. For precise diagrams, and layout, please refer to the original PDF.
HUFA75332G3, HUFA75332P3, HUFA75332S3S Data Sheet June 2002 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the...
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Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. For
HUFA75329P3 Datasheet
