IRF510A Datasheet PDF

FEATURES

n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175°C Operating Temperature n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V n Lower RDS(ON) : 0.289 Ω (Typ.) IRF510A BVDSS = 100 V RDS(on) = 0.4 Ω ID = 5.6 A TO-220 1 2 3 1.Gate 2. Drain 3. Source

ABSOLUTE MAXIMUM RATINGS

Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8? from case for 5-seconds (2) (1) (1) (1) Value 100 5.6 4 20 ±20 63 5.6 3.3 6.5 33 0.22 - 55 to +175 Units V A A V mJ A mJ V/ns W W/°C (2) °C 300 Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max.