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IRF510A Datasheet Advanced Power MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: Advanced Power MOSFET.

Key Features

  • n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175°C Operating Temperature n Lower Leakage Current : 10 μA (Max. ) @ VDS = 100V n Lower RDS(ON) : 0.289 Ω (Typ. ) IRF510A BVDSS = 100 V RDS(on) = 0.4 Ω ID = 5.6 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25.

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