IRF510
Key Features
- rDS(ON) = 0.540Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Related Literature
- Part: IRF510
- Description: N-Channel Power MOSFET
- Category: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 90.67 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF510S | Vishay | Power MOSFET |
| IRF510 | Inchange Semiconductor | N-Channel MOSFET Transistor |
| IRF512 | Harris Corporation | N-Channel Power MOSFETs |
| IRF513 | Harris Corporation | N-Channel Power MOSFETs |
| IRF513 | Inchange Semiconductor | N-Channel MOSFET Transistor |
| IRF512 | Inchange Semiconductor | N-Channel MOSFET Transistor |
| IRF511 | Supertex Inc | N-Channel Enhancement-Mode Vertical DMOS Power FET |
| IRF512 | Supertex Inc | N-Channel Enhancement-Mode Vertical DMOS Power FET |
| IRF513 | Supertex Inc | N-Channel Enhancement-Mode Vertical DMOS Power FET |