IRF620A - Power MOSFET

Product Overview

Fairchild Semiconductor

Part number	IRF620A
Manufacturer	Fairchild Semiconductor
File Size	254.20 KB
Description	Power MOSFET
Datasheet	IRF620A Datasheet
Additional preview pages of the IRF620A datasheet.

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 200V Low RDS(ON) : 0.626 Ω(Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 oC) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Aug 4, 2016 |