Inchange Semiconductor IRF620A
N-Channel Mosfet Transistor
FEATURES
●Low RDS(on) = 0.626Ω(TYP)●Lower Input Capacitance
●Improved Gate Charge
●Extended Safe Operating Area
●Rugged Gate Oxide Technology
DESCRIPTION
●Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±30 V V ID Drain Current-Continuous 5A IDM Drain Current-Single Pluse 18 A PD Total Dissipation @TC=25℃ 47 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ isc website: 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc Product Specification●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 2.65 62.5 UNIT ℃/W ℃/W isc website: 2 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc IRF620A N-Channel isc Product Specification MOSFET Transistor...