IRFI550A - (IRFI550A / IRFW550A) Advanced Power MOSFET

Product Overview

Fairchild Semiconductor

Part number	IRFI550A
Manufacturer	Fairchild Semiconductor
File Size	292.98 KB
Description	(IRFI550A / IRFW550A) Advanced Power MOSFET
Datasheet	IRFI550A Datasheet
Additional preview pages of the IRFI550A datasheet.

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V Lower RDS(ON) : 0.032 Ω (Typ. ) Ο IRFW/I550A BVDSS = 100 V RDS(on) = 0.04 Ω ID = 40 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Conti.

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Published: Feb 3, 2007 |