IRFI634B
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies.
Features
- -
- -
- - 8.1A, 250V, RDS(on) = 0.45Ω @VGS = 10 V Low gate charge ( typical 29 n C) Low Crss ( typical 20 p F) Fast switching 100% avalanche tested Improved dv/dt capability
!
- ◀
▲
- -
G! G S
D2-PAK
IRFW Series
I2-PAK
IRFI Series
!
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage
- Continuous (TC = 25°C) Drain Current
- Continuous (TC = 100°C) Drain Current
- Pulsed
(Note 1)
IRFW634B / IRFI634B 250 8.1 5.1 32.4 ± 30
(Note 2)...
