IRFI634B - 250V N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	IRFI634B
Manufacturer	Fairchild Semiconductor
File Size	649.97 KB
Description	250V N-Channel MOSFET
Datasheet	IRFI634B Datasheet
Additional preview pages of the IRFI634B datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

8.1A, 250V, RDS(on) = 0.45Ω @VGS = 10 V Low gate charge ( typical 29 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
◀ ▲.
G! G S D2-PAK IRFW Series G D S I2-PAK IRFI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuo.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Apr 16, 2005 |