Datasheet4U Logo Datasheet4U.com

IRFI644B - 250V N-Channel MOSFET

📥 Download Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Overview

IRFW644B / IRFI644B November 2001 IRFW644B / IRFI644B 250V N-Channel.

Key Features

  • 14A, 250V, RDS(on) = 0.28Ω @VGS = 10 V Low gate charge ( typical 47 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
  • ◀ ▲.
  • G! G S D2-PAK IRFW Series G D S I2-PAK IRFI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
International Rectifier Logo IRFI644 Power MOSFET International Rectifier
Vishay Logo IRFI644G Power MOSFET Vishay
International Rectifier Logo IRFI644G Power MOSFET International Rectifier

More Datasheets from Fairchild (now onsemi)

Part Number Description
IRFI644B N-Channel MOSFET
IRFI644 250V N-Channel MOSFET
IRFI644A Power MOSFET
IRFI640 200V N-Channel MOSFET
IRFI640A Power MOSFET
IRFI640B 200V N-Channel MOSFET
IRFI640B N-Channel MOSFET
IRFI610B 200V N-Channel MOSFET
IRFI610B N-Channel MOSFET
IRFI614A Power MOSFET