IRFI644A - Power MOSFET

Fairchild (now onsemi)

Key Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current: 10µA (Max. ) @ VDS = 250V.
Lower RDS(ON): 0.214Ω (Typ. ) IRFW/I644A BVDSS = 250 V RDS(on) = 0.28Ω ID = 14 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Conti.

IRFI644A power mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	IRFI644A
Manufacturer	Fairchild (now onsemi)
File Size	255.40 KB
Description	Power MOSFET
Datasheet	IRFI644A Datasheet

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Other Datasheets by Fairchild (now onsemi)

Part Number	Description
IRFI644	250V N-Channel MOSFET
IRFI644B	250V N-Channel MOSFET
IRFI644B	N-Channel MOSFET
IRFI640	200V N-Channel MOSFET
IRFI640A	Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 0.214Ω (Typ.) IRFW/I644A BVDSS = 250 V RDS(on) = 0.28Ω ID = 14 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3.