Datasheet Summary
.vishay.
Vishay Siliconix
Power MOSFET
D TO-220 FULLPAK
S GD
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 10 V
70 13 39 Single
Features
- Isolated package
- High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
- Sink to lead creepage distance = 4.8 mm
- Dynamic dV/dt rating
- Low thermal resistance
- Material categorization: for definitions of pliance please see .vishay./doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220...
