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IRFI640GPbF - Power MOSFET

Download the IRFI640GPbF datasheet PDF. This datasheet also covers the IRFI640G variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.

Key Features

  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to Lead Creepage Distance = 4.8 mm.
  • Dynamic dV/dt Rating Available RoHS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFI640G-Vishay.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFI640G Power MOSFET International Rectifier
IRFI640 200V N-Channel MOSFET Fairchild Semiconductor
IRFI640A Power MOSFET Fairchild Semiconductor
IRFI640B 200V N-Channel MOSFET Fairchild Semiconductor
IRFI640B N-Channel MOSFET Fairchild Semiconductor

Other Datasheets by Vishay

Part Number Description
IRFI640G Power MOSFET
IRFI644G Power MOSFET
IRFI614G Power MOSFET
IRFI620G Power MOSFET
IRFI624G Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power MOSFET IRFI640G, SiHFI640G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 70 13 39 Single 0.18 TO-220 FULLPAK D G GDS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating Available RoHS* COMPLIANT • Low Thermal Resistance • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.