IRFI830 Key Features
- 4.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 17 pF) Fast switching 100% av
| Manufacturer | Part Number | Description |
|---|---|---|
Samsung Semiconductor |
IRFI830A | Power MOSFET |
International Rectifier |
IRFI830G | Power MOSFET |
Vishay |
IRFI830G | Power MOSFET |