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IRFI840A Datasheet Advanced Power MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: $GYDQFHG 3RZHU 026)(7.

Key Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 500V.
  • Lower RDS(ON): 0.638Ω (Typ. ) IRFW/I840A BVDSS = 500 V RDS(on) = 0.85Ω ID = 8 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Contin.

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