IRFI840GLC Datasheet Power MOSFET

Manufacturer: Vishay

Overview: www.vishay.com IRFI840GLC Vishay Siliconix Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 39 10 19 Single 0.

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IRFI840GLC power mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	IRFI840GLC
Manufacturer	Vishay
File Size	953.31 KB
Description	Power MOSFET
Download	IRFI840GLC Download (PDF)

General Description

This series of low charge power MOSFETs achieve significantly lower gate charge over conventional MOSFETs.

Utilizing advanced power MOSFET technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings.

These device improvements combined with the proven ruggedness and reliability that are characteristic of MOSFETs offer the designer a new standard in power transistors for switching applications.

Key Features

Ultra low gate charge.
Reduced gate drive requirement.
Enhanced 30 V VGS rating.
Isolated package.
High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
Sink to lead creepage distance = 4.8 mm.
Repetitive avalanche rated.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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