IRFI840GLC Overview
This series of low charge power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced power MOSFET technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements bined with the proven ruggedness and reliability that are characteristic of MOSFETs offer the designer a new...
IRFI840GLC Key Features
- Ultra low gate charge
- Reduced gate drive requirement
- Enhanced 30 V VGS rating
- Isolated package
- High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
- Sink to lead creepage distance = 4.8 mm
- Repetitive avalanche rated
- Material categorization: for definitions of pliance please see .vishay./doc?99912
