IRFI840GLC Datasheet Text
.vishay.
IRFI840GLC
Vishay Siliconix
Power MOSFET
D TO-220 FULLPAK
G
S GD
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
39 10 19 Single
0.85
Features
- Ultra low gate charge
- Reduced gate drive requirement
- Enhanced 30 V VGS rating
- Isolated package
- High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
- Sink to lead creepage distance = 4.8 mm
- Repetitive avalanche rated
- Material categorization: for definitions of pliance please see .vishay./doc?99912
DESCRIPTION
This series of low charge power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced power MOSFET technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements bined with the proven ruggedness and reliability that are characteristic of MOSFETs offer the designer a new standard in power transistors for switching applications.
The TO-220 FULLPAK eliminates the need for additional insulating hardware. The molding pound used provides a high isolation capability and low thermal resistance between the tab and external heatsink.
ORDERING INFORMATION
Package Lead (Pb)-free
TO-220 FULLPAK...
