IRFI840G Datasheet Text
.vishay.
Power MOSFET
D TO-220 FULLPAK
G
S GD
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)
500 VGS = 10 V
0.85
Qg (Max.) (nC)
67
Qgs (nC)
10
Qgd (nC)
34
Configuration
Single
IRFI840G
Vishay Siliconix
Features
- Isolated package
- High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
- Sink to lead creepage distance = 4.8 mm
- Dynamic dV/dt rating
- Low thermal resistance
- Material categorization: for definitions of pliance please see .vishay./doc?99912
DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The molding pound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
ORDERING INFORMATION
Package Lead (Pb)-free...
