IRFM120A Overview
Advanced Power MOSFET FEATURES IRFM120A BVDSS = 100 V RDS(on) = 0.2 ! ID = 2.3 A 2 IEEE802.3af patible ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 #A (Max.) @ VDS = 100V ! Lower RDS(ON) : 0.155 ! (Typ.) 1 3 1. Gate 2. Drain 3. Source
