IRFM120A Datasheet | Fairchild Semiconductor

FEATURES BVDSS = 100 V RDS(on) = 0.2 ! ID = 2.3 A SOT-223 IEEE802.3af patible ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 #A (Max.) @ VDS = 100V ! Lower RDS(ON) : 0.155 ! (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25%) Continuous Drain Current (TA=70%) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25%) - Linear Derating Factor - Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds ' & & ( & Value 100 2.3 1.84 18 "20 123 2.3 0.24 6.5 2.4 0.019 - 55 to +150 Units V A A V m J A m J V/ns W W/% % 300 Thermal Resistance Symbol R$JA Characteristic Junction-to-Ambient - Typ. -Max. 52 Units %/W - When mounted on the minimum pad size remended (PCB Mount). Rev. C Electrical Characteristics (TA=25% unless otherwise specified) Symbol BVDSS .BV/.TJ VGS(th) IGSS Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Min. Typ. Max. Units 100 -2.0 ---IDSS --Static Drain-Source RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge -------------0.12 -------3.12 370 95 38 14 14 36 28 16 2.7 7.8 --4.0 100 -100 1 10 100 0.2 -480 110 45 40 40 90 70 22 --n C ns p F ) S #A V V/% V n A N-CHANNEL POWER MOSFET Test Condition...