IRFM120A
IRFM120A is Power MOSFET manufactured by onsemi.
FEATURES
IEEE802.3af patible
! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 #A (Max.) @ VDS = 100V ! Lower RDS(ON) : 0.155 ! (Typ.)
BVDSS = 100 V RDS(on) = 0.2 ! ID = 2.3 A
SOT-223
2 1
Absolute Maximum Ratings
Symbol VDSS ID
IDM VGS EAS IAR EAR dv/dt PD
TJ , TSTG
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TA=25%)
Continuous Drain Current (TA=70%)
Drain Current-Pulsed
&
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
'
Avalanche Current
&
Repetitive Avalanche Energy
&
Peak Diode Recovery dv/dt
(
Total Power Dissipation (TA=25%)
- Linear Derating Factor
- Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
1. Gate 2. Drain 3. Source
Value 100 2.3 1.84 18 "20 123 2.3 0.24 6.5 2.4 0.019
- 55 to +150
Units V
A V m J A m J V/ns W...
