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IRFM120A - Power MOSFET

Key Features

  • IEEE802.3af Compatible ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 #A (Max. ) @ VDS = 100V ! Lower RDS(ON) : 0.155 ! (Typ. ) BVDSS = 100 V RDS(on) = 0.2 ! ID = 2.3 A SOT-223 2 1 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25%) Continuous Drain Current (TA=70%).

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Advanced Power MOSFET IRFM120A FEATURES IEEE802.3af Compatible ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 #A (Max.) @ VDS = 100V ! Lower RDS(ON) : 0.155 ! (Typ.) BVDSS = 100 V RDS(on) = 0.2 ! ID = 2.