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IRFP340B Datasheet 400v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: www.DataSheet4U.com IRFP340B November 2001 IRFP340B 400V N-Channel.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.

Key Features

  • 11A, 400V, RDS(on) = 0.54Ω @VGS = 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
  • ◀ ▲.
  • G! www. DataSheet4U. com TO-3P ! G DS IRFP Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Conti.

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IRFP340B Distributor