Fairchild Semiconductor IRFR210B
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.| Part No. | IRFR210B |
|---|---|
| Datasheet | IRFR210B Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | 200V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.FEATURES
●●
●
●
●
● 2.7A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
● ◀ ▲
●
● G S D-PAK IRFR Series I-PAK G D S IRFU Series G! ! S
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRFR210B / IRFU210B 200 2.7 1.7 10 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 40 2.7 2.6 5.5 2.5 26 0.2 -55 to +150 300 TJ, Tstg TL - De...
