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IRFR210B - 200V N-Channel MOSFET

Download the IRFR210B datasheet PDF. This datasheet also covers the IRFU210B variant, as both devices belong to the same 200v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Key Features

  • 2.7A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
  • ◀ ▲.
  • G S D-PAK IRFR Series I-PAK G D S IRFU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continu.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFU210B_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFR210 Power MOSFET International Rectifier
IRFR210 Power MOSFET Vishay Siliconix
IRFR210A Power MOSFET Samsung
IRFR210PBF HEXFET POWER MOSFET International Rectifier
IRFR214 N-Channel Power MOSFETs Intersil Corporation

Other Datasheets by Fairchild (now onsemi)

Part Number Description
IRFR214 Power MOSFET
IRFR214B 250V N-Channel MOSFET
IRFR220A Advanced Power MOSFET
IRFR220B 200V N-Channel MOSFET
IRFR224 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRFR210B / IRFU210B November 2001 IRFR210B / IRFU210B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. Features • • • • • • 2.7A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.