IRFR210 Datasheet | Vishay

FEATURES - Dynamic d V/dt Rating - Repetitive Avalanche Rated - Surface Mount (IRFR210, Si HFR210) - Straight Lead (IRFU210, Si HFU210) - Available in Tape and Reel - Fast Switching - Ease of Paralleling - Material categorization: For definitions of pliance please see .vishay./doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, Si HFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free DPAK (TO-252) Si HFR210-GE3 IRFR210Pb F Si HFR210-E3 Note a. See device orientation. DPAK (TO-252) Si HFR210TRL-GE3a IRFR210TRLPb Fa Si HFR210TL-E3a DPAK (TO-252) IRFR210TRPb Fa Si HFR210T-E3a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery d V/dtc TC = 25 °C TA = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature)d for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 28 m H, Rg = 25 , IAS = 2.6 A (see fig. 12). c. ISD  2.6 A, d I/dt  70 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). DPAK (TO-252) Si HFR210TRR-GE3a - IPAK (TO-251)...