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IRFR230A - Advanced Power MOSFET

Download the IRFR230A datasheet PDF. This datasheet also covers the IRFU230A variant, as both devices belong to the same advanced power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 200V Low RDS(ON) : 0.333 Ω (Typ. ) IRFR/U230A BVDSS = 200 V RDS(on) = 0.4 Ω ID = 7.5 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFU230A-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
IRFR230B 200V N-Channel MOSFET
IRFR234 Power MOSFET
IRFR234B 250V N-Channel MOSFET
IRFR210B 200V N-Channel MOSFET
IRFR214 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.333 Ω (Typ.) IRFR/U230A BVDSS = 200 V RDS(on) = 0.4 Ω ID = 7.5 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3.