IRFS254A
FEATURES
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current: 10µA (Max.) @ VDS = 250V
- Low RDS(ON): 0.108Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS
IDM VGS EAS IAR EAR dv/dt
TJ , TSTG
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TC=25°C) Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
BVDSS = 250 V RDS(on) = 0.14Ω ID = 16 A
TO-3PF
1 2 3
1.Gate 2. Drain 3. Source
Value 250 16 10.1 100 ±30 640 16 9 4.8 90...
